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Abstract— <p>Nowadays, semiconductor thin films are promising options, due to their excellent optical and electrical characteristics. The chemical evaporation method was used to prepare pure and thin films of ruthenium (Ru) doped vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>) thin films and analyzed the crystalline nature, functional group, optical, and mobility of the electron flow using a variety of instruments, including X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–Visible spectroscopy, photoluminescence (PL) and Hall effect. Structural studies confirmed that the as prepared thin films were rhombohedral structure with polycrystalline in nature. SEM images showed that spongy-like morphology with a less scattered surface. The topography of doped thin films showed a pyramidal shape with high surface roughness. UV–Vis spectra were used to examine the optical qualities and the band gap calculated from Tauc plot and the values were increased from 2.40&#xa0;to 2.62 eV with the doping of Ru from 2 to 8%. According to Hall effect measurements, 8% Ru doped V<sub>2</sub>O<sub>5</sub> films showed minimum resistivity and maximum carrier concentration. The photocatalytic activity of the degradation of Rhodamine B under sunlight illumination was examined and obtained the degradation efficiency 90% within 120 min for 8% Ru doped V<sub>2</sub>O<sub>5</sub> samples when compared to pure V<sub>2</sub>O<sub>5</sub>.</p>

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Investigation on Morphological, Optical and Electrical Properties of Ru doped V2O5 thin Films and their Application of Photocatalytic Activity

  • 期刊论文

  • 发表日期：

    2025年1月1日

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  • I. Kartharinal Punithavthy,
  • A. Sherin Fathima,
  • B. Arunkumar,
  • Manikandan Ayyar

摘要

Abstract—

Nowadays, semiconductor thin films are promising options, due to their excellent optical and electrical characteristics. The chemical evaporation method was used to prepare pure and thin films of ruthenium (Ru) doped vanadium pentoxide (V2O5) thin films and analyzed the crystalline nature, functional group, optical, and mobility of the electron flow using a variety of instruments, including X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–Visible spectroscopy, photoluminescence (PL) and Hall effect. Structural studies confirmed that the as prepared thin films were rhombohedral structure with polycrystalline in nature. SEM images showed that spongy-like morphology with a less scattered surface. The topography of doped thin films showed a pyramidal shape with high surface roughness. UV–Vis spectra were used to examine the optical qualities and the band gap calculated from Tauc plot and the values were increased from 2.40 to 2.62 eV with the doping of Ru from 2 to 8%. According to Hall effect measurements, 8% Ru doped V2O5 films showed minimum resistivity and maximum carrier concentration. The photocatalytic activity of the degradation of Rhodamine B under sunlight illumination was examined and obtained the degradation efficiency 90% within 120 min for 8% Ru doped V2O5 samples when compared to pure V2O5.