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Abstract <p>β-Ga<sub>2</sub>O<sub>3</sub> and diamond, emerging wide bandgap semiconductors, hold promise as alternatives to GaN and SiC in the next generation of power devices due to their exceptional material properties. In this paper, the focus is on evaluating the analog performance of a <i>p</i>-GaN-based β-Ga<sub>2</sub>O<sub>3</sub> FET on various wide bandgap materials as substrates, including GaN, β-Ga<sub>2</sub>O<sub>3</sub>, and diamond. The <i>p</i>-GaN layer provides a robust and stable threshold voltage, minimizing gate leakage issues that can arise in Schottky gate structures used in conventional β-Ga<sub>2</sub>O<sub>3</sub> devices. The research compares the outcomes obtained from different substrate materials and investigates the impact of gate length and work function variations on device performance. The diamond-based FET provides 1.19 V and 1.49 × 10<sup>12</sup> threshold voltage and <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub>, respectively. Key parameters such as transfer characteristics, transconductance, total capacitance is analyzed to highlight their suitability for high-performance analog applications.</p>

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Design, Simulation, and Comparison of p-GaN-based β-Ga2O3 FET on Wide Bandgap Substrates

  • 期刊论文

  • 发表日期：

    2025年4月24日

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  • Panga Ravendra,
  • Ashish Raman,
  • Ravi Ranjan,
  • Nitesh Kashyap

摘要

Abstract

β-Ga2O3 and diamond, emerging wide bandgap semiconductors, hold promise as alternatives to GaN and SiC in the next generation of power devices due to their exceptional material properties. In this paper, the focus is on evaluating the analog performance of a p-GaN-based β-Ga2O3 FET on various wide bandgap materials as substrates, including GaN, β-Ga2O3, and diamond. The p-GaN layer provides a robust and stable threshold voltage, minimizing gate leakage issues that can arise in Schottky gate structures used in conventional β-Ga2O3 devices. The research compares the outcomes obtained from different substrate materials and investigates the impact of gate length and work function variations on device performance. The diamond-based FET provides 1.19 V and 1.49 × 1012 threshold voltage and Ion/Ioff, respectively. Key parameters such as transfer characteristics, transconductance, total capacitance is analyzed to highlight their suitability for high-performance analog applications.