Effect of Temperature and Magnetic Field on Electron Mobility in SiGe/Si/SiGe–layer Structures

In this work, we investigate the electron mobility in SiGe/Si/SiGe quantum wells under the influence of temperature and an external magnetic field. The scattering mechanisms of remote doping and background doping are considered in the calculations of this paper. The results indicate that the temperature and magnetic field significantly affect the electronic properties of the charge carriers.