Performance of Si and GaAs GAA Nanowire FET for 8 nm Channel Length Using 3D Full Quantum Transport Simulation

In line with the fast progress of nanotechnology, it is important to have compact semiconductor devices to function and offer the best results at various technology nodes. Gate-All-Around (GAA) Nanowire Field Effect Transistor (FET) is one of the most promising structures. Nanowire having an 8 nm channel length with the same source and drain doping concentration is used for this analysis. This work uses the sp³d⁵s* tight-binding model for comparative analysis of Nanowire FET. The non-equilibrium Green’s function (NEGF) approach is used for this simulation. The comparative analysis is made by changing the diameter of the nanowire, crystal orientation, and oxide thickness for different channel materials Si and GaAs. The results show that the GAA Si Nanowire is superior with a high current on-off (I_on/off) ratio of 10¹¹ having a diameter of 1.5 nm. The nanowire with a small diameter shows the best result in terms of On-current (I_on) and Off-current (I_off). For crystal orientation x[100] which is along the transport of carriers in nanowires, the results obtained are very good as compared to other orientations. The hydrostatic strain has been analyzed. The change in the current on-off ratio with hydrostatic strain makes them a leading option for future sensors.