Effects of 10 MeV Electron Irradiation on Electrical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

Gallium nitride (GaN), renowned for its inherent characteristics such as a high threshold potential and wide-band gap, stands as a promising candidate for the development of semiconductor devices intended for deployment in demanding radiation environments. This paper meticulously investigates the repercussions of electron irradiation on the intricate electrical properties of Ni/Pd/n-GaN Schottky barrier diodes (SBDs). The Ni/Pd/n-GaN SBDs underwent irradiation with 10 MeV electrons, encompassing varying doses ranging from 15 kGy to 149 kGy. A comprehensive analysis of alterations in diverse electrical properties of the SBDs was conducted, employing methodologies derived from Current-Voltage (I–V) characteristics. The electron-irradiated devices exhibited maximal deviation from their pristine state at a dose of 15 kGy, potentially attributable to annihilation or restructuring of traps within the semiconductor. Remarkably, deviations in ideality factor (n) and barrier height (ϕ_B) were inconsequential at doses of 75 and 149 kGy. Conversely, a notable escalation in series resistance was observed at 149 kGy, indicating a pronounced deterioration in the overall device properties. Additionally, an exploration of the charge transport mechanisms revealed a discernible influence of thermionic emission and various current transport mechanisms on the irradiated Ni/Pd/n-GaN SBDs. The outcomes of this investigation not only provide crucial insights into the nuanced changes induced by electron irradiation on the electrical characteristics of Ni/Pd/n-GaN Schottky diodes but also offer valuable information for the development of semiconductor devices resilient to the challenges posed by harsh radiation environments. This study contributes to the evolving understanding of GaN-based devices and their potential applications in radiation-rich scenarios.