Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate
摘要
Abstract
Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.