MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current

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发表日期：

2024年5月1日

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I. V. Samartsev,
B. N. Zvonkov,
N. V. Baidus,
A. B. Chigineva,
K. S. Zhidyaev,
N. V. Dikareva,
A. V. Zdoroveyshchev,
A. V. Rykov,
S. M. Plankina,
A. V. Nezhdanov,
A. V. Ershov

摘要

Abstract

The epitaxial growth technique of InGaAs photodiode structures based on a digital InGaAs/GaAs metamorphic buffer layer by metalorganic chemical vapor deposition has been developed. The spectral dependence of the photocurrent of photodiodes based on the produced structures has a maximum at the 1.24 μm wavelength. The photosensitivity range at 10% of peak is 1.17–1.29 μm at room temperature. The current-voltage characteristics in the temperature range 9–300 K were investigated. It is shown that the dark current consists of generation-recombination and tunneling components. The dark current density at room temperature was 8 × 10^–5 A/cm² with a reverse bias of –5 V.