Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes

The carrier removal rates during proton and electron irradiations of n-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф_р ≤ 5 × 10¹⁴ cm^–2; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф_n ≤ 5 × 10¹⁶ cm^–2. The value of the removal rate during proton irradiation, η_p ≈ 140 cm^–1, is close to the lower limit of currently known values of η_p and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η_e is ≈0.47 cm^–1 and corresponds to the typical values of η_e for type gallium nitride obtained by various methods.