Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te
摘要
Abstract
The results of photoluminescence (PL) study of As-doped Cd0.3Hg0.7Te solid solutions films grown by molecular beam epitaxy on a Si substrate are presented. Analysis of the PL spectra obtained at different temperatures and excitation laser powers allows one to judge the nature of the observed peaks. The activation of arsenic in annealed samples was established, as a result of which acceptor levels are formed. The effectiveness of arsenic as an acceptor impurity for cadmium-mercury tellurides has been confirmed.