Formation of Single and Heterostructured Nanowires Based on InAs_{1 – x}P_x Solid Solutions on Si(111)

We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]_NWs || [111]_Si, [ \(11\bar {2}0\) ]_NWs || [ \(1\bar {1}0\) ]_Si. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (<100 nm) segments of the InAs_{1 – x}P_x solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%).