Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

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发表日期：

2024年3月1日

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L. A. Snigirev,
N. A. Bert,
V. V. Preobrazhenskii,
M. A. Putyato,
B. R. Semyagin,
V. V. Chaldyshev

摘要

Abstract

Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs_0.97Sb_0.03 grown by low-temperature (150°C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250°C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs_0.97Sb_0.03 grown at 150°C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.