Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs
摘要
Abstract
The influence of AlGaAsP, GaAsP and AlGaAs/GaAsP compensating layers on the optical quality of the active area based on InGaAs/GaAs quantum wells for LEDs emitting at a wavelength of 940 nm has been studied. Heterostructures with multiple quantum wells have been grown by MOVPE technique using various approaches to compensating structural stresses. An increase in photoluminescence intensity by more than 32% was demonstrated when using AlGaAs/GaAsP compensating layers.