Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them

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发表日期：

2024年3月1日

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I. V. Ilkiv,
V. V. Lendyashova,
B. B. Borodin,
V. G. Talalaev,
T. Shugabaev,
R. R. Reznik,
G. E. Cirlin

摘要

Abstract

Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.