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Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds

  • 期刊论文

  • 发表日期：

    2024年2月1日

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  • A. S. Vlasov,
  • K. M. Afanasev,
  • A. I. Galimov,
  • N. A. Kalyuzhnyy,
  • D. V. Lebedev,
  • A. V. Malevskaya,
  • S. A. Mintairov,
  • M. V. Rakhlin,
  • R. A. Salii,
  • A. M. Mozharov,
  • I. S. Mukhin,
  • A. M. Mintairov

摘要

Abstract

Experiments on the growth of self-assembled InP/GaInP2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO2 and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.