The Effect of Electric Field on Impurity States in InGaAsP/InP Quantum Ring

The impurity states in the InGaAsP/InP quantum ring were calculated using the plane wave expansion method within the theoretical framework of the effective mass envelope function approximation. The impurity binding energies of the 1s and 2p± states, as well as the impurity transition energies between them, were calculated and analyzed in detail. Calculations show that the quantum ring height and outer radius have different effects on the impurity transition energy. When the impurity moves in the radial direction, the binding energy reaches a maximum in the quantum ring, but shows an asymmetric distribution, while the transition energy gradually decreases. When the impurity moves in the axial direction, both the binding energy and transition energy reach their maximum values in the axial center and are symmetrically distributed. When the impurity is located at the position of z_i ≥ 0, the impurity binding energy and transition energy both decrease due to the application of electric field, however, when the impurity is located at the position of z_i < 0, they both increase with the application of electric field.