Charge Plasma Dopingless Device: Boosting High-Frequency Performance with Germanium and Hetero Dielectric Gate

A Charge Plasma Dopingless Field-Effect Transistor (CDFET) is designed to improve analog and radio frequency (RF) performance by incorporating a germanium pocket source and a heterodielectric gate structure using HfO₂ and TiO₂. This dopingless design simplifies fabrication compared to conventional transistors while enhancing performance, particularly in high-frequency applications. The germanium pocket source significantly improves carrier mobility, allowing faster electron transport and better current performance than traditional silicon-based transistors. The heterodielectric gate structure optimizes gate capacitance, reduces leakage, and improves electric field control, which is essential for RF signal handling. Extensive TCAD simulations reveal that the CDFET achieves a high ON-current of 3.00 × 10^–3 A, ensuring efficient conduction in the active state, and an ultra-low OFF-current of 2.18 × 10^–16 A, which minimizes power leakage when the device is off. The device also demonstrates excellent RF performance, achieving a gain transconductance frequency product (GTFP) of 84.2 tera hertz and a cut-off frequency (fₜ) of 270 giga hertz, making it highly suitable for high-frequency and RF communication systems. These results highlight the CDFET’s potential for future high-performance analog and RF circuits, combining design simplicity with impressive power efficiency and signal-handling capabilities.