Plasma Neutron Generator on a Plasma Target for Activation of Semiconductor Materials
摘要
The scheme of a plasma neutron generator on a plasma target, theoretical and applied aspects of modeling the magnetohydrodynamic flow of controlled plasma, substantiation of the discretization of condensed plasma and ion fluxes based on the introduction of the concept of flow discreteness stemming from the development of methods and technology for creating and forming electronically controlled ion and plasma fluxes in magnetic fields by grouping fluxes in certain sequences are briefly considered. The operation of the developed installations is based on the physical principles of discrete compaction of plasma and ion flows by changing the control parameters of magneto-optical systems. Preliminary experiments have been carried out on a setup with a plasma electric generator for irradiating semiconductor heterostructures to create radiation-induced defects.