Radiation Damage to SiPM Irradiated with Fast Neutrons

Silicon pixel photomultipliers (SiPM) are widely used in various fields of scientific experimental equipment. As a rule, the use of SiPM in physical experiments at accelerators assumes the presence of a radiation background in the area where the detection equipment is located. Radiation defects created in the space charge region (SCR) of pixels lead to an increase in thermal generation current, which is a source of noise. The main and practical issues for any experiment are lifetime and degradation rate of the main parameters and SiPM operating modes that reduce the negative effects from the radiation damage accumulation over time. This paper attempts to practically answer some of these questions.