Effect of Temperature and Magnetic Field on the Resistivity of a Quasi Two Dimensional in GaP/AlP/GaP Layered Structures

In this work, we use quantum mechanics theory to investigate and calculate the resistivity of the electron gas in a GaP/AlP/GaP quantum well at zero temperature and arbitrary temperatures under the influence of a magnetic field parallel to the layer. The calculations are performed considering the surface roughness scattering mechanism and the ionized impurity scattering mechanism. The results indicate that the temperature and magnetic field significantly affect the electronic properties of the two-dimensional electron gas. Moreover, the investigation results also reveal the influence of scattering mechanisms on the resistivity of a two-dimensional electron gas. The effects of the localization field correction also impact the electronic properties of the two-dimensional electron system in the quantum well structure. The results of this study are highly important for gathering information about layer structure for electronic applications.