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Abstract <p>During fabrication of silicon targets, defects are formed both on the surface and in its structure. Some defects are difficult to identify. Later, they manifest themselves only when the target is used in a vidicon. The structure of the substrate, antireflection coating, and surface of the photosensitive elements of targets was studied using X-ray diffractometry and optical microscopy. Substrate deformation, caused by uneven impact on the edges of the target when pressing it into a ring, was established. This deformation leads to occurrence of mechanical stress with an increase in the concentration of charge carrier generation centers. A significant violation of the [111] orientation in a Si layer deposited on the target substrate was revealed. A new result explaining the formation of white illumination in the images when checking the vidicon was obtained. A new technique for monitoring the detection of these defects was developed.</p>

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Influence of Inhomogeneous Impact at Edges of Silicon Targets for Vidicons on Their Photoelectric Characteristics and Lattice Structure

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • V. V. Davydov,
  • A. A. Sokolova,
  • V. D. Andreeva,
  • A. E. Kim

摘要

Abstract

During fabrication of silicon targets, defects are formed both on the surface and in its structure. Some defects are difficult to identify. Later, they manifest themselves only when the target is used in a vidicon. The structure of the substrate, antireflection coating, and surface of the photosensitive elements of targets was studied using X-ray diffractometry and optical microscopy. Substrate deformation, caused by uneven impact on the edges of the target when pressing it into a ring, was established. This deformation leads to occurrence of mechanical stress with an increase in the concentration of charge carrier generation centers. A significant violation of the [111] orientation in a Si layer deposited on the target substrate was revealed. A new result explaining the formation of white illumination in the images when checking the vidicon was obtained. A new technique for monitoring the detection of these defects was developed.