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Abstract <p>A phase transition in a ~10-nm-thick Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) film upon heating it from room temperature to ~400°C has been studied using a pulsed electron diffractometer. During crystallization of a&#xa0;freely suspended amorphous sample, the formation of a hexagonal GST phase has been detected, in&#xa0;which mixing of Sb and Ge leads to a formal violation of the translational and unit-cell symmetries. However, upon heating an identical amorphous GST film on a carbon membrane, the crystalline state is represented only by a cubic phase. A qualitative explanation within the Phillips theory for such a&#xa0;nanoscale effect in GST has been proposed, which opens up new possibilities for controlling structural ordering in phase-change memory materials.</p>

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Partially Disordered Crystalline State in a Thin Ge2Sb2Te5 Film: Manifestation of the Thermally Induced Nanoscale Effect

  • 期刊论文

  • 发表日期：

    2025年10月1日

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  • B. N. Mironov,
  • D. G. Poydashev,
  • S. A. Aseyev,
  • A. L. Malinovsky,
  • A. S. Avilov,
  • A. A. Ischenko,
  • E. A. Ryabov

摘要

Abstract

A phase transition in a ~10-nm-thick Ge2Sb2Te5 (GST) film upon heating it from room temperature to ~400°C has been studied using a pulsed electron diffractometer. During crystallization of a freely suspended amorphous sample, the formation of a hexagonal GST phase has been detected, in which mixing of Sb and Ge leads to a formal violation of the translational and unit-cell symmetries. However, upon heating an identical amorphous GST film on a carbon membrane, the crystalline state is represented only by a cubic phase. A qualitative explanation within the Phillips theory for such a nanoscale effect in GST has been proposed, which opens up new possibilities for controlling structural ordering in phase-change memory materials.