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Abstract <p>Parameters of tracks of swift heavy ions stopped in the electron energy loss regime in SiC films with a thickness of 10–100 nm have been determined. A model has been used that describes all stages of the track formation, from ionization and heating of the lattice (MC TREKIS-3) to its complete relaxation (classical molecular dynamics). Under irradiation by a 710-MeV Bi ion, surface nanohillocks are formed, the height of which increases with the film thickness <i>L</i>, attaining a constant value of 5.7 nm at <i>L &gt;</i> 30 nm. Nanocavities surrounded by defect clusters remain along the ion trajectory over the entire volume of the films with <i>L</i> &lt; 100 nm. In the 100 nm-thick film, a defect region near the surface is cone-shaped and extends to a depth of 35 nm.</p>

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Effect of the SiC Film Thickness on the Morphology of Swift Heavy Ion Tracks

  • 期刊论文

  • 发表日期：

    2025年12月26日

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  • D. I. Zainutdinov,
  • A. E. Volkov

摘要

Abstract

Parameters of tracks of swift heavy ions stopped in the electron energy loss regime in SiC films with a thickness of 10–100 nm have been determined. A model has been used that describes all stages of the track formation, from ionization and heating of the lattice (MC TREKIS-3) to its complete relaxation (classical molecular dynamics). Under irradiation by a 710-MeV Bi ion, surface nanohillocks are formed, the height of which increases with the film thickness L, attaining a constant value of 5.7 nm at L > 30 nm. Nanocavities surrounded by defect clusters remain along the ion trajectory over the entire volume of the films with L < 100 nm. In the 100 nm-thick film, a defect region near the surface is cone-shaped and extends to a depth of 35 nm.