Features of the Ga₂O₃ Layers Synthesized on Silicon by Molecular Layering

The possibility of synthesizing gallium oxide semiconductor layers by the classical thermal method of molecular layering with trimethyl gallium and ozone precursors and controlling the electrical properties of the synthesized layers is shown. Homogeneous layers of specified thickness have been deposited in a single cycle onto a silicon substrate, monocrystalline quartz, and high-aspect-ratio 3D substrates in the form of microchannel plates. The synthesized gallium oxide layers are amorphous, conforming to the Ga₂O₃ stoichiometry; have a band gap of 4.9 ± 0.2 eV; and do not exhibit the impurity conductivity. The possibility of obtaining gallium oxide films with the impurity conductivity by molecular layering according to a specified program, with alternation of the chemical composition of the precursors used, is demonstrated.