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Bi Nanostructures Obtained on Si Substrates by Thermal Evaporation

  • G. N. Kozhemyakin,
  • S. A. Kiiko,
  • A. V. Kiiko,
  • V. V. Artemov,
  • I. S. Volchkov

摘要

Abstract

Low dimension Bi structures were obtained on Si(100) substrates by thermal evaporation in Ar at 10‒20 s deposition time. The sizes and distribution density of Bi nano- and microcrystals were determined by computer processing of electron SEM-images. The nanocrystal density was larger than the microcrystal density by a factor of 260. The decrease of the nanocrystal density by a factor of 2 with the increase of their sizes was observed with the increase up to 20 s deposition time. X-ray diffraction analysis has revealed oxide layers on Bi nanocrystals and the Si substrate surface. The decrease of Bi nanocrystals sizes and the increase of their density on the Si substrates as compared of deposition on glassy carbon substrates was established.