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Features of Interlayer Interfaces in Transparent Conducting Oxide/Metal/Oxide Trilayer Structures

  • A. Sh. Asvarov,
  • A. K. Akhmedov,
  • E. K. Murliev,
  • A. Kh. Abduev,
  • V. M. Kanevsky

摘要

Abstract

A comparative study of the growth processes, microstructures, and electrical characteristics of oxide/metal/oxide trilayer structures of different compositions synthesized at 50°C by rf magnetron sputtering in argon has been performed. The effect of subsequent annealing in an open atmosphere on the conductivity of the structures has been investigated. Transmission electron microscopy and energy-dispersive X-ray spectroscopy have been used to examine changes in the microstructure and profiles of distribution of chemical elements included in the structures under annealing. Based on the results obtained, mechanisms have been proposed for the transformation of interlayer interfaces and conditions of carrier transport in the structures, depending on the composition of the oxide and metallic layers comprising them.