Crystals of para-Quaterphenyl and Its Trimethylsilyl Derivative. I: Growth from Solutions, Structure, and Crystal Chemical Analysis by the Hirschfeld Surface Method

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2024年10月1日

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V. A. Postnikov,
N. I. Sorokina,
M. S. Lyasnikova,
G. A. Yurasik,
A. A. Kulishov,
T. A. Sorokin,
O. V. Borshchev,
E. A. Svidchenko,
N. M. Surin

摘要

Abstract—

The results of studying the growth of para-quaterphenyl (4P) and its derivative—4,4'''-bis(trimethylsilyl)-para-quaterphenyl (TMS-4P-TMS)—crystals from solutions are presented. It has been established that TMS-4P-TMS crystals exhibit better growth characteristics as compared to 4Р. Parameters of the phase transitions of 4P and TMS-4P-TMS in closed crucibles were refined using differential scanning calorimetry. The crystal structure of TMS-4P-TMS in the triclinic space group P \(\bar {1}\) (Z = 2) has been decrypted for the first time using single-crystal X-ray diffraction and was studied in a wide temperature range. A crystallographic analysis of the studied compounds in crystals was performed using the Hirshfeld surface method, and modeling of intermolecular interactions was performed.