Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

Thin manganese silicide films were obtained on mica by magnetron sputtering from targets of three types. The microstructure and elemental composition of the targets and films were studied by scanning electron microscopy and reflection electron diffraction. The phase composition and structure of the films over depth (cuts) were controlled by scanning and transmission electron microscopy. It has been shown that, when depositing films from poly- and single-crystal targets of higher manganese silicide, in contrast to a target from sintered Мn and Si powders, one can obtain polycrystalline films of higher manganese silicide of the Mn₄Si₇ composition after subsequent 1-h annealing at a temperature of 800 K and a pressure of 10^–3 Pa.