Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO

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发表日期：

2024年2月1日

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A. S. Komolov,
E. F. Lazneva,
V. S. Sobolev,
S. A. Pshenichnyuk,
N. L. Asfandiarov,
E. V. Zhizhin,
D. A. Pudikov,
E. A. Dubov,
I. A. Pronin,
F. Dj. Akbarova,
U. B. Sharopov

摘要

Abstract

The surface topography and density of unoccupied electronic states at thermal deposition of ultrathin dibromo-bianthracene films on the ZnO surface have been studied. The electronic characteristics of unoccupied electronic states during growth of dibromo-bianthracene films to a thickness of 10 nm have been investigated by total current spectroscopy using a probe electron beam. The experimental dependences have been analyzed using theoretical calculation of the orbital energies for dibromo-bianthracene molecules by the method of density functional theory (DFT).