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Abstract <p>This paper examines the mathematical modeling of switching dynamics in ferroelectric memory elements based on hafnium and hafnium–zirconium oxides. A two-scale model is proposed, including a quantum-mechanical calculation at the atomic level and a thermodynamic description of the system at the level of the memory element. The simulation results are in good agreement with the experimental data.</p>

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Multiscale Modeling of Nonvolatile Memory Elements (FeRAM)

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • A. A. Zhuravlev,
  • K. K. Abgaryan,
  • A. G. Ital’yantsev,
  • D. L. Reviznikov

摘要

Abstract

This paper examines the mathematical modeling of switching dynamics in ferroelectric memory elements based on hafnium and hafnium–zirconium oxides. A two-scale model is proposed, including a quantum-mechanical calculation at the atomic level and a thermodynamic description of the system at the level of the memory element. The simulation results are in good agreement with the experimental data.