Abstract <p>This paper considers compact models of nonvolatile memory elements ReRAM, FeRAM, and MRAM. In contrast to the classical approach to parametric identification, in which the model parameters are selected based on minimizing the standard deviation of the model data from the experimental data, the interval approach implies that the model parameters are interval ones and are determined based on the requirement to include experimental data in the model interval estimates. Interval models, or in other words models with interval parameters, provide lower and upper limits on the characteristics of interest of the elements being studied. The obtained simulation results are consistent with the experimental data.</p>