Abstract <p>Various types of devices are used to indicate impact effects, from destructive seals to complex inertial systems. There is a need to develop a device that can signal when the permissible acceleration has been exceeded or when the load has been subjected to impact. An example of such a device would be an impact sensor. In this study, the developed design of the KMG-1 micromechanical impact sensor and the principle of its operation are presented. A silicon-on-insulator (SOI) structure with the (111) orientation of the working layer is used as the material for manufacturing the sensitive element. The main stages of the technological process of manufacturing a prototype of a micromechanical impact sensor using the Bosch process and eutectic soldering are considered. The parameters of deep etching of silicon are determined. An etching process is selected that reduces the etching effect of finished structures at the interface between the device layer and the dielectric, as well as the parameters of eutectic soldering of silicon structures. It is shown that the application of the proposed technological process allows obtaining a tolerance for the response level ranging from 10 to 50%. The developed KMG-1 micromechanical impact sensor can be used to record various impact effects during cargo transportation.</p>