Abstract <p>When creating precise temperature control systems, it is necessary to consider numerous factors affecting the functional and operational characteristics of thermoelectric systems. In this study, the metrological support for studying and monitoring the parameters of thermoelectric materials, structures, and devices at all stages of the development and production of thermoelectric systems is considered. The developed and obtained effective nanostructured materials on the basis of BiTeSe and BiSbTe with a dimensionless thermoelectric figure of merit of 1.16 and 1.24, respectively, are presented. Complex studies of these materials are carried out, the mechanisms of electrical and thermal conductivity are determined, and the relationship between their structure and parameters is established. The technology of metal-dielectric commutation matrices based on oxidized aluminum alloys for thermoelectric modules is developed. The kinetics of the growth of porous anodic oxide films on aluminum alloys is determined. The methods of forming and using contact materials in thermoelectric modules, whose specific contact resistance is 10^–9 Ω m² and adhesion strength is up to 19 MPa are substantiated. A technology for sealing thermoelectric modules with increased reliability and mechanical strength is developed. The design criteria are defined and substantiatied, based on which the power supplies for thermoelectric systems, having a low pulsation level (0.3%) and high degree of efficiency (93%), are manufactured. To calculate the temperature in electronic thermometers mathematical models allowing the temperature determination with an accuracy of 5 × 10^–3 K are developed and justified. The presented precise electronic temperature measuring instruments, as well as precise thermoelectric thermostats, calibrators, and heat and cold chambers, have operating temperatures ranging from –50 to +60°C.</p>