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Abstract <p>A model of RF (13.56 MHz) inductively coupled plasma in a mixture of HBr + O<sub>2</sub>, which corrects the shortcomings of previous work by accounting for the gas temperature and determining the rate constants of heterogeneous recombination of atoms, is presented. The model is verified by a comparison of the calculated concentrations of hydrogen and oxygen atoms with the results of the actinometric experiments. Using diagnostic and modeling methods in combination, the influence of the component ratio, pressure, and input power on the electrophysical parameters of the plasma, the composition of the gas phase, and the kinetics of active particles that ensure the process of reactive ion etching of silicon is investigated.</p>

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Parameters and Composition of Plasma in a Mixture of HBr + O2: Model Adjustment and Comparison with Experiment

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • M. V. Tsepkin,
  • A. M. Efremov,
  • V. B. Betelin,
  • K.-H. Kwon

摘要

Abstract

A model of RF (13.56 MHz) inductively coupled plasma in a mixture of HBr + O2, which corrects the shortcomings of previous work by accounting for the gas temperature and determining the rate constants of heterogeneous recombination of atoms, is presented. The model is verified by a comparison of the calculated concentrations of hydrogen and oxygen atoms with the results of the actinometric experiments. Using diagnostic and modeling methods in combination, the influence of the component ratio, pressure, and input power on the electrophysical parameters of the plasma, the composition of the gas phase, and the kinetics of active particles that ensure the process of reactive ion etching of silicon is investigated.