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Abstract <p>A general approach to modeling the critical charge for single event effects in digital integral circuits is described. Explicit expressions are obtained for the critical charges for single event upsets (SEU) as functions of the technological and circuit parameters of CMOS SRAM.</p>

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Physics-Based Modeling of the Single Event Upset Critical Charge in Digital Electronics

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • A. A. Mateiko,
  • A. S. Rodin,
  • I. A. Makarova,
  • E. N. Abramova,
  • G. I. Zebrev

摘要

Abstract

A general approach to modeling the critical charge for single event effects in digital integral circuits is described. Explicit expressions are obtained for the critical charges for single event upsets (SEU) as functions of the technological and circuit parameters of CMOS SRAM.