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Abstract <p>A comparative analysis of two microtechnologies for manufacturing silicon planar X-ray optics was presented: the Bosch process and cryogenic plasma etching. Comprehensive analysis using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray interferometry demonstrated that cryogenic etching enables manufacturing of surfaces with exceptionally low local sidewall roughness (3.6 nm RMS on 2&#xa0;×&#xa0;2 µm area). The X-ray interferometric technique demonstrated high sensitivity to the integral surface quality, establishing a correlation between surface morphology and optical characteristics. The results have great significance for developing next-generation X-ray optics that minimizes wavefront distortions of coherent beams.</p>

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Comparative Characteristics of Microelectronic Deep Etching Technologies for X-ray Optics Applications

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • M. N. Sorokovikov,
  • D. A. Zverev,
  • I. I. Lyatun,
  • A. A. Barannikov,
  • M. A. Voevodina,
  • V. A. Yunkin,
  • A. V. Miakonkikh,
  • K. V. Rudenko,
  • A. A. Snigirev

摘要

Abstract

A comparative analysis of two microtechnologies for manufacturing silicon planar X-ray optics was presented: the Bosch process and cryogenic plasma etching. Comprehensive analysis using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray interferometry demonstrated that cryogenic etching enables manufacturing of surfaces with exceptionally low local sidewall roughness (3.6 nm RMS on 2 × 2 µm area). The X-ray interferometric technique demonstrated high sensitivity to the integral surface quality, establishing a correlation between surface morphology and optical characteristics. The results have great significance for developing next-generation X-ray optics that minimizes wavefront distortions of coherent beams.