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Abstract <p>The paper proposes an Innovative method for express assessment of the Si epitaxial structure parameters with SAM (substrate, absorption, and multiplication) architecture for avalanche photodiodes (APD) is discussed in the paper. Finally, a Si heterostructure was grown, models for verification were developed, electro-optical tests were carried out to assess the characteristics of the epitaxial structure and real characteristics were compared with simulated results.</p>

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Express Analysis for Heterostructures Quality

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • V. O. Atyunin,
  • V. V. Borichok,
  • E. I. Kobzev,
  • O. I. Rabinovich,
  • A. A. Savchuk,
  • M. N. Orlova,
  • U. V. Osipov,
  • I. V. Borzykh

摘要

Abstract

The paper proposes an Innovative method for express assessment of the Si epitaxial structure parameters with SAM (substrate, absorption, and multiplication) architecture for avalanche photodiodes (APD) is discussed in the paper. Finally, a Si heterostructure was grown, models for verification were developed, electro-optical tests were carried out to assess the characteristics of the epitaxial structure and real characteristics were compared with simulated results.