Abstract <p>Silicon carbide (SiC) power MOSFETs are increasingly adopted in high-performance applications such as aerospace and nuclear systems due to their high efficiency and robustness under extreme conditions. However, exposure to ionizing radiation can induce single event effects (SEEs), which compromise device reliability. This work investigates the radiation response of SiC power MOSFETs using TCAD simulations. The study examines the impact of gate length, gate oxide thickness, and the heights of the P-well, N⁺, and drift regions on current–voltage (I–V) characteristics and key electrical parameters, including threshold voltage, on-state resistance, off-state resistance, breakdown voltage, and gate charge. Furthermore, the susceptibility of SiC MOSFETs to single event transients (SETs) is analyzed by simulating interactions with ionizing particles across different linear energy transfer (LET) values. The analysis reveals that the center of the drain is the most critical region, while the center of the source is the least critical under normal incidence.</p>