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Abstract <p>The structural and memristive properties of layered Cu/PPX–PbTe/ITO samples based on parylene (poly-<i>p</i>-xylylene, PPX) containing PbTe nanoparticles are studied. An unusual light-induced effect on the resistive switching (RS) behavior is observed: in the high-resistance state (HRS), the memristor’s conductivity increases under illumination, whereas in the low-resistance state (LRS), negative photoconductivity (i.e., a noticeable decrease in conductivity) is observed during cyclic RS. A qualitative model is proposed that describes the switching mechanism with and without optical excitation. The RS specifications and their tunability by illumination demonstrate the potential of hybrid PPX-based memristors for use as sensory and synaptic elements in the development of neuromorphic vision systems.</p>

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Resistive Switching Characteristics of PPX-Based Memristors with PbTe Nanoparticles under Photoexcitation

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • A. D. Trofimov,
  • S. N. Nikolaev,
  • A. V. Emelyanov,
  • V. A. Demin,
  • V. V. Rylkov

摘要

Abstract

The structural and memristive properties of layered Cu/PPX–PbTe/ITO samples based on parylene (poly-p-xylylene, PPX) containing PbTe nanoparticles are studied. An unusual light-induced effect on the resistive switching (RS) behavior is observed: in the high-resistance state (HRS), the memristor’s conductivity increases under illumination, whereas in the low-resistance state (LRS), negative photoconductivity (i.e., a noticeable decrease in conductivity) is observed during cyclic RS. A qualitative model is proposed that describes the switching mechanism with and without optical excitation. The RS specifications and their tunability by illumination demonstrate the potential of hybrid PPX-based memristors for use as sensory and synaptic elements in the development of neuromorphic vision systems.