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Abstract <p>Electron irradiation can be used as a simulant of gamma radiation irradiation. This paper presents a method for calculating the absorbed energy of electrons in various materials over a wide range of atomic numbers and converting this energy into an absorbed dose, which is equivalent to gamma radiation kerma. The main parameters of the presented model are the effective atomic number of the target <i>Z</i><sub>eff</sub>, its density ρ, and the energy of electrons <i>E</i><sub>0</sub>. To recalculate the absorbed dose, it is also necessary to take into account the electron flow <i>F</i>, as well as the thickness of the layer in question. The effects of exposure to electrons with energies of several keV and gamma radiation is compared.</p>

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Method for Testing the Radiation Resistance of Semiconductor Electronics Materials in an Electron Microscope

  • 期刊论文

  • 发表日期：

    2025年10月1日

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  • V. A. Kiselevskii,
  • A. A. Tatarintsev

摘要

Abstract

Electron irradiation can be used as a simulant of gamma radiation irradiation. This paper presents a method for calculating the absorbed energy of electrons in various materials over a wide range of atomic numbers and converting this energy into an absorbed dose, which is equivalent to gamma radiation kerma. The main parameters of the presented model are the effective atomic number of the target Zeff, its density ρ, and the energy of electrons E0. To recalculate the absorbed dose, it is also necessary to take into account the electron flow F, as well as the thickness of the layer in question. The effects of exposure to electrons with energies of several keV and gamma radiation is compared.