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Abstract <p>This paper presents a comprehensive review of the development of three-dimensional FinFET transistor technologies. The features of the formation of FinFET transistors from various manufacturers, the materials used in them, and the main approaches to improve their production technologies are considered. Based on openly accessible sources, an analysis and comparison of the main characteristics of FinFET transistors manufactured according to technological production standards ranging from 22 to 3 nm is carried out.</p>

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Structure and Materials of FinFET Transistors

  • 期刊论文

  • 发表日期：

    2025年10月1日

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  • D. A. Abdullaev,
  • L. M. Kolchina,
  • R. A. Milovanov

摘要

Abstract

This paper presents a comprehensive review of the development of three-dimensional FinFET transistor technologies. The features of the formation of FinFET transistors from various manufacturers, the materials used in them, and the main approaches to improve their production technologies are considered. Based on openly accessible sources, an analysis and comparison of the main characteristics of FinFET transistors manufactured according to technological production standards ranging from 22 to 3 nm is carried out.