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Abstract <p>Zinc sulfide (ZnS) thin films, were deposited on glass substrate, using SILAR technique. We varied the concentrations of the cationic and anionic precursors of 0.05, 0.1 and 0.15 M (ZnCl<sub>2</sub>, Na<sub>2</sub>S), to study its influence on structural, morphological, electrical and optical properties of ZnS thin films. We constate that the XRD patterns have shown two miller plans (111) and (220). For this reason, we add new process named sulfurization, in the hope to ameliorate the crystallinity of our films. As result, the XRD pattern has shown Miller indexing peaks corresponding to the blend phase (cfc). Using the same process, UV/visible optical transmission/absorption spectra displayed the transmittance between 61 and 82% with a band gap in the range of 3.09–3.23 eV. The values of electrical parameters using the four-point method and hot tip technique, were reported and confirmed many results obtained in last few months. Scanning electron microscopy (SEM) revealed the effect of concentration precursors on growth mechanism, in consideration of sulfurization process. This mechanism, is verry important to get sophistical ZnS samples, destined to photovoltaic industry.</p>

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Effect of Concentration Precursors of ZnS Thin Films Deposited by SILAR Technique on Glass Substrate

  • 期刊论文

  • 发表日期：

    2025年10月1日

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  • H. Elfarri,
  • L. Znaidi,
  • K. Mahmoudi,
  • K. Nouneh

摘要

Abstract

Zinc sulfide (ZnS) thin films, were deposited on glass substrate, using SILAR technique. We varied the concentrations of the cationic and anionic precursors of 0.05, 0.1 and 0.15 M (ZnCl2, Na2S), to study its influence on structural, morphological, electrical and optical properties of ZnS thin films. We constate that the XRD patterns have shown two miller plans (111) and (220). For this reason, we add new process named sulfurization, in the hope to ameliorate the crystallinity of our films. As result, the XRD pattern has shown Miller indexing peaks corresponding to the blend phase (cfc). Using the same process, UV/visible optical transmission/absorption spectra displayed the transmittance between 61 and 82% with a band gap in the range of 3.09–3.23 eV. The values of electrical parameters using the four-point method and hot tip technique, were reported and confirmed many results obtained in last few months. Scanning electron microscopy (SEM) revealed the effect of concentration precursors on growth mechanism, in consideration of sulfurization process. This mechanism, is verry important to get sophistical ZnS samples, destined to photovoltaic industry.