Prospects for the Development of Electron-Beam and Ion-Beam Lithography in Russia
摘要
The issues of creating resists in Russia for electron-beam and ion-beam lithography processes are considered. The manufactured positive resists based on polymethyl methacrylate allow the creation of nanosized structures. Moreover, the possibility of using a combination of the created resists as two-layer resists is demonstrated. The prospects for the development of domestic processes of electron-beam and ion-beam lithography are also demonstrated. At present, technological processes of electron-beam and ion-beam lithography in Russia are at the demonstrator stage. In the near future, domestic installations for electron-beam and ion-beam lithography will be developed. It will take significantly more time to organize the production of ion-beam lithography installations in Russia.