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Abstract <p>Multilayer silicon diode structures with submicron base layers of <i>n</i>- and <i>p</i>-type conductivity are grown by sublimation molecular beam epitaxy. The distribution profiles of the charge carrier concentration (electrons and holes) are determined using the method of capacitance-voltage characteristics (CVC). The use of silicon sublimation sources cut from silicon ingots that have been doped with phosphorus or boron makes it possible to achieve a uniform distribution of the charge carrier concentration across the thickness of the layers and an extremely sharp profile at their boundary with the Si substrate. Such structures can be successfully used for the production of diodes.</p>

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Multilayer Epitaxial Silicon Structures with Submicron Layers Grown by Sublimation Molecular Beam Epitaxy

  • 期刊论文

  • 发表日期：

    2025年8月1日

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  • V. G. Shengurov,
  • A. M. Titova,
  • N. A. Alyabina,
  • V. Yu. Chalkov,
  • S. A. Denisov,
  • A. V. Zdoroveishchev

摘要

Abstract

Multilayer silicon diode structures with submicron base layers of n- and p-type conductivity are grown by sublimation molecular beam epitaxy. The distribution profiles of the charge carrier concentration (electrons and holes) are determined using the method of capacitance-voltage characteristics (CVC). The use of silicon sublimation sources cut from silicon ingots that have been doped with phosphorus or boron makes it possible to achieve a uniform distribution of the charge carrier concentration across the thickness of the layers and an extremely sharp profile at their boundary with the Si substrate. Such structures can be successfully used for the production of diodes.