Scholarlink

Abstract <p>High-electron-mobility transistors based on gallium nitride (GaN HEMTs) have found widespread use in power and microwave electronics. Due to their electrical properties, GaN HEMTs allow for significant reduction in the size of microelectronic devices compared to silicon-based devices. A further development of gallium nitride-based devices is the production of multi-component integrated circuits controlled by logic gates. The implementation of integrated logic circuits based on GaN HEMTs involves the design of basic logic gates. The difficulty in implementing logic gates based on GaN HEMTs is complicated by the lack of a complementary pair of transistors. The combined use of normally-on (N-On) and normally-off (N-Off) <i>n</i>-channel GaN HEMTs in a single circuit solves this problem. In the article, dynamic modeling of five logic gates based on N-On and N-Off <i>n</i>-channel GaN HEMTs was performed by the Sentaurus Device (TCAD) software tool.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Physical Modeling of Integrated Logic Circuit Based on GaN Transistors

  • 期刊论文

  • 发表日期：

    2025年8月1日

查看全文
  • D. M. Kurbanbaeva,
  • O. B. Chukanova,
  • A. V. Lashkov,
  • K. A. Tsarik,
  • V. I. Korneev

摘要

Abstract

High-electron-mobility transistors based on gallium nitride (GaN HEMTs) have found widespread use in power and microwave electronics. Due to their electrical properties, GaN HEMTs allow for significant reduction in the size of microelectronic devices compared to silicon-based devices. A further development of gallium nitride-based devices is the production of multi-component integrated circuits controlled by logic gates. The implementation of integrated logic circuits based on GaN HEMTs involves the design of basic logic gates. The difficulty in implementing logic gates based on GaN HEMTs is complicated by the lack of a complementary pair of transistors. The combined use of normally-on (N-On) and normally-off (N-Off) n-channel GaN HEMTs in a single circuit solves this problem. In the article, dynamic modeling of five logic gates based on N-On and N-Off n-channel GaN HEMTs was performed by the Sentaurus Device (TCAD) software tool.