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Abstract <p>Using spectroscopic and probe diagnostic methods for diagnosing the radical composition and electronic component of a radio-frequency inductively (RFI) coupled discharge, studies are conducted on the low-energy (<i>E</i><sub>i</sub> ~ 80 eV) etching of a nanometer-thick Ru film in the remote plasma of a 50% Ar/Cl<sub>2</sub>/O<sub>2</sub> mixture, depending on pressure, RF power, and relative Cl<sub>2</sub>/O<sub>2</sub> content. At 10–30% chlorine content in the plasma a wide maximum of the Ru etch rate is observed. In plasma of this composition, using an array of amorphous silicon nanocones as a mask, vertical Ru nanocolumnar structures with a height of 35 nm and a distance between them of 10–20 nm are obtained. The mechanism of Ru etching in 50% Ar/Cl<sub>2</sub>/O<sub>2</sub> plasma is discussed.</p>

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Nanostructured Etching of Ruthenium in Three-Component Cl2/O2/Ar Plasma

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • I. I. Amirov,
  • M. O. Izyumov,
  • D. V. Lopaev,
  • T. V. Rakhimova,
  • A. N. Kropotkin,
  • D. G. Voloshin,
  • A. P. Palov

摘要

Abstract

Using spectroscopic and probe diagnostic methods for diagnosing the radical composition and electronic component of a radio-frequency inductively (RFI) coupled discharge, studies are conducted on the low-energy (Ei ~ 80 eV) etching of a nanometer-thick Ru film in the remote plasma of a 50% Ar/Cl2/O2 mixture, depending on pressure, RF power, and relative Cl2/O2 content. At 10–30% chlorine content in the plasma a wide maximum of the Ru etch rate is observed. In plasma of this composition, using an array of amorphous silicon nanocones as a mask, vertical Ru nanocolumnar structures with a height of 35 nm and a distance between them of 10–20 nm are obtained. The mechanism of Ru etching in 50% Ar/Cl2/O2 plasma is discussed.