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Abstract <p>The occurrence of upsets in very large-scale integrated (VLSI) circuits under the influence of pulsed ionizing radiation (IR) of various natures is analyzed. The impact of gamma or electron pulses leads to upsets due to volume ionization of semiconductor structures, which in VLSI circuits manifest themselves primarily due to the effects of rail span collapse. The features of the occurrence of upsets due to the non-steady-state latchup and in the case of several possible competing processes are analyzed. Non-stationary surface radiation effects and the effects of rapid annealing of radiation defects can lead mainly to short-term parametric upsets, which largely depend on the radiation intensity. The features of the formation of single event effects under the influence of pulsed beams of neutrons, protons, or ions are considered.</p>

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Features of Upsets Formation in VLSI under Pulsed Ionizing Radiation

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • A. I. Chumakov

摘要

Abstract

The occurrence of upsets in very large-scale integrated (VLSI) circuits under the influence of pulsed ionizing radiation (IR) of various natures is analyzed. The impact of gamma or electron pulses leads to upsets due to volume ionization of semiconductor structures, which in VLSI circuits manifest themselves primarily due to the effects of rail span collapse. The features of the occurrence of upsets due to the non-steady-state latchup and in the case of several possible competing processes are analyzed. Non-stationary surface radiation effects and the effects of rapid annealing of radiation defects can lead mainly to short-term parametric upsets, which largely depend on the radiation intensity. The features of the formation of single event effects under the influence of pulsed beams of neutrons, protons, or ions are considered.