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Abstract <p>Using oxidized lead selenide as an interface, Ag/PbSeO<sub><i>x</i></sub>/PbSe heterostructures exhibiting stable memristive properties are fabricated. In order to obtain metastable multilevel states on these structures, studies are carried out using different protocols for supplying pulse signals. By adjusting the number, amplitude, duration, and duty cycle of pulses, 13 metastable resistive states are realized. The studied memristor remains stable and reproducible over a period of several months.</p>

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Multilevel Switching in Memristive Structures Based on Oxidized Lead Selenide

  • 期刊论文

  • 发表日期：

    2025年4月1日

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  • N. A. Tulina,
  • A. N. Rossolenko,
  • I. M. Shmyt’ko,
  • I. Yu. Borisenko,
  • D. N. Borisenko,
  • N. N. Kolesnikov

摘要

Abstract

Using oxidized lead selenide as an interface, Ag/PbSeOx/PbSe heterostructures exhibiting stable memristive properties are fabricated. In order to obtain metastable multilevel states on these structures, studies are carried out using different protocols for supplying pulse signals. By adjusting the number, amplitude, duration, and duty cycle of pulses, 13 metastable resistive states are realized. The studied memristor remains stable and reproducible over a period of several months.