Abstract <p>This paper assesses and reports on the effects of temperature change within the 200 to 500 K range on the DC parameters of a heterojunction dual metal ferroelectric double gate-tunnel field effect transistor (HDM-Fe-DGTFET). The analysed parameters of the device, encompass subthreshold swing, energy band, current ratio, and drive current. The high-k material enhances both the on-state current (<i>I</i>_ON) and reduces leakage, while the dual metal gate effectively mitigates short-channel effects. The findings clearly indicate that temperature has a minimal impact on the ON-current, while it significantly influences the OFF-current. Nonetheless, a greater <i>I</i>_ON/<i>I</i>_OFF ratio has been preserved, with the lowest and greatest values attained being 2.39 × 10¹³ at 200 K and 9.15 × 10⁷ at 500 K, respectively. The subthreshold swing has been measured at 200 K is 12.76 mV/decade and at 500 K is 33.41 mV/decade. These simulations were meticulously carried out using the SILVACO TCAD Simulator, ensuring accurate and reliable data. Simulation results reveal significant improvements in transfer characteristics of the HDM-Fe-DGTFET. The work-function engineering along with the Ge-Pocket at the tunneling junction, and pocket engineering, is considered responsible for such improvement. This investigation emphasizes the strength of the HDM-Fe-DGTFET in preserving excellent electrical performance over a broad temperature spectrum, demonstrating its applicability in settings with fluctuating thermal conditions. The findings from this study will enhance our comprehension of temperature’s influence on contemporary transistor technologies and aid in the design of devices with improved thermal stability. Sophisticated electronic applications are possible through this device as its design has been optimized to obtain outstanding analog and RF performance.</p>