Scholarlink

Abstract <p>This study explores the static, dynamic, and thermal behaviors of SiGe Heterojunction Bipolar Transistors (HBTs) fabricated using the BiCMOS9MW 0.13 µm technology with varying multi-finger emitter configurations (1 to 12 emitters). Simulations conducted via COMSOL Multiphysics integrated the Semiconductor and Heat Transfer in Solids (HTS) modules. Results revealed substantial improvements in collector and base currents, along with an increase in maximum current gain (β<sub>max</sub>) from 1913 to 3870, depending on the emitter count. The 12-emitter device achieved the highest cutoff (<i>f</i><sub><i>t</i></sub> = 316.8 GHz) and oscillation frequencies (<i>f</i><sub>max</sub> = 360.1 GHz). Thermal analysis demonstrated that increasing emitter count reduces maximum self-heating temperatures (<i>T</i><sub>max</sub>), dropping from 467 K for a singleemitter HBT to 413 K for a 12-emitter configuration. Central emitters experienced the highest temperatures due to thermal coupling. These findings provide key insights into optimizing emitter configurations to enhance performance and thermal stability in advanced BiCMOS technologies.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Impact of Self-Heating in Si/SiGe HBTs with Multi-Finger Emitters

  • 期刊论文

  • 发表日期：

    2025年4月1日

查看全文
  • Abdelaaziz Boulgheb,
  • Maya Lakhdara,
  • Saida Latreche

摘要

Abstract

This study explores the static, dynamic, and thermal behaviors of SiGe Heterojunction Bipolar Transistors (HBTs) fabricated using the BiCMOS9MW 0.13 µm technology with varying multi-finger emitter configurations (1 to 12 emitters). Simulations conducted via COMSOL Multiphysics integrated the Semiconductor and Heat Transfer in Solids (HTS) modules. Results revealed substantial improvements in collector and base currents, along with an increase in maximum current gain (βmax) from 1913 to 3870, depending on the emitter count. The 12-emitter device achieved the highest cutoff (ft = 316.8 GHz) and oscillation frequencies (fmax = 360.1 GHz). Thermal analysis demonstrated that increasing emitter count reduces maximum self-heating temperatures (Tmax), dropping from 467 K for a singleemitter HBT to 413 K for a 12-emitter configuration. Central emitters experienced the highest temperatures due to thermal coupling. These findings provide key insights into optimizing emitter configurations to enhance performance and thermal stability in advanced BiCMOS technologies.