Abstract <p>In this paper, the performance of junctionless TreeFET device is analyzed and compared with vertically stacked nanosheet FET device. This work seeks to realize junctionless vertically stacked nanosheet FET by using the advantages of nanosheets and junctionless transistors. A TreeFET device was built from the junctionless vertically stacked nanosheet FET by adding interbridge between the nanosheets. DC and AC characteristics of both the devices were studied and compared with each other. The TreeFET device results an increased, ON state current (<i>I</i>_ON), transconductance (<i>g</i>_m) and unity gain frequency (<i>f</i>_T) of 13.67, 15.59 and 44.86% respectively compared to the junctionless vertically stacked nanosheet FET. Both the devices produced a current switching ratio (<i>I</i>_ON/<i>I</i>_OFF) of more than 10⁹. Also, the impact of dimensional scaling on various parameters of TreeFET were studied.</p>